Hi,
I am looking at the NAND flash driver code of ts720 and have the
following question on how spare area read/writes are done:
The ts7250.o nand driver (drivers/mtd/nand/ts7250.c) uses the default
nand driver (in mtd/nand/nand_base.c) provided by mtd to do page
rd/wr, erase and oob rd/wr. Looking at the NAND datasheet from Samsung
(K9F1G08R0A), the chip does not have a special control instruction
meant for OOB (spare area) read/write. Thus, the OOB read/write is
done via page read/write command. However, the source code seems to be
contradicting -
In mtd/nand/nand_base.c func: nand_read_oob_std() gets called to do an
OOB read, which in turn calls the chip->cmdfunc(mtd,
NAND_CMD_READOOB). Since there is no command equivalent of
NAND_CMD_READOOB in the samsung flash chip that comes with ts7250, I
was wondering how the read_oob() takes place ?
May be I am missing something here ?
thanks,
-siddharth
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